Effect of Ge mole fraction on current, voltage and electric field characteristics of high doping nanoscale Si 1−x Ge x /Si p-n diode

Narottama, Anak Agung Ngurah Made and Sapteka, Anak Agung Ngurah Gde (2017) Effect of Ge mole fraction on current, voltage and electric field characteristics of high doping nanoscale Si 1−x Ge x /Si p-n diode. In: IEEE - 15th International Conference on Quality in Research (QiR) : International Symposium on Electrical and Computer Engineering.

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Official URL: https://doi.org/10.1109/QIR.2017.8168451

Item Type:	Conference or Workshop Item (Paper)
Subjects:	Ilmu Teknik > Teknik Elektro Dan Informatika Ilmu Teknik > Teknik Elektro Dan Informatika > Teknik Elektro
Divisions:	Jurusan Teknik Elektro > Prodi D3 Teknik Listrik > Publikasi Jurusan Teknik Elektro > Prodi D4 Teknik Otomasi > Publikasi
Depositing User:	Anak Agung Ngurah Gde Sapteka
Date Deposited:	01 May 2023 05:17
Last Modified:	01 May 2023 05:17
URI:	http://repository.pnb.ac.id/id/eprint/5504

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